China Al particle Manufacturers, Suppliers, Factory

Researchers have recently developed a novel light-responsive double network hydrogel based on methyl acrylated peptide nanofibers (PNFMA) with high biocompatibility, excellent biodegradability, and multifunctionality for the modulation of cancer cells in photothermal therapy.

Small particle alumina powder has a wide range of applications in ceramics, chemical engineering, electronics and other fields due to its unique physical and chemical properties. However, in practical applications, small-sized alumina powder is prone to agglomeration, which refers to the phenomenon of powder particles adhering to each other and forming larger aggregates during storage, transportation, or use due to various factors. Causing its performance to be affected. The agglomeration phenomenon can lead to poor flowability and reduced dispersibility of the powder, affecting product quality.

ITO powder stands for Indium Tin Oxide powder, which is mostly used as a transparent and conductive material in various technological applications. Recently, the synthesis and use of Nano ITO powder have been in the spotlight due to its unique benefits over conventional ITO powder. This blog will explore the applications of Nano ITO powder in detail.

Dongguan Sat Nano Material Technology Co., Ltd. will participate in the 15th China International Advanced Ceramics Exhibition held at the Shanghai World Expo Exhibition Hall from May 31 to June 2, 2023. The exhibition aims to showcase the latest technologies,

With the development of integrated circuit (IC) technology, the scaling of silicon-based metal oxide semiconductor (MOS) field-effect transistors (FETs) is approaching their fundamental physical limits. Carbon nanotubes (CNTs) are considered promising materials in the post silicon era due to their atomic thickness and unique electrical properties, with the potential to improve transistor performance while reducing power consumption. High purity aligned carbon nanotubes (A-CNT) are an ideal choice for driving advanced ICs due to their high current density. However, when the channel length (Lch) decreases below 30nm, the performance of single gate (SG) A-CNT FET significantly decreases, mainly manifested as deteriorating switching characteristics and increased leakage current. This article aims to reveal the mechanism of performance degradation in A-CNT FET through theoretical and experimental research, and propose solutions.