China conductive Silver metal Particle Manufacturers, Suppliers, Factory

During the transportation process of powder, it is necessary to avoid stacking, as stacking can affect the fluidity of the powder. Stacking can be avoided by installing slopes, increasing transportation pipelines, and other methods.

Silver nanowire dispersion and silver nanowire ink are two common solutions containing nano silver wires, which have some differences in properties and applications.

Nano Silver Powder is a revolutionary product that is designed to help you fight against bacteria and germs in a highly effective and efficient manner. Our product is based on the latest scientific research in the field of nanotechnology and can help you keep your environment clean and healthy.

SAT NANO is a leading supplier of high-quality nanoscale zinc oxide powder. Our products come in two sizes, 10-20 nm and 30 nm. Besides, we have recently developed an innovative surface modification method that improves the stability and dispersibility of our nanoscale zinc oxide powder. This method is effective in converting the surface of the powder from hydrophilic to hydrophobic, thus reducing the agglomeration of particles and enhancing their performance in various applications.

Nano silver powder, as an important functional material, plays an important role in multiple industrial fields due to its unique physical and chemical properties. Among them, 100nm silver powder (silver powder with a particle size of 100 nanometers) has become one of the most widely used specifications due to its excellent performance in conductivity, antibacterial and catalytic properties.

With the development of integrated circuit (IC) technology, the scaling of silicon-based metal oxide semiconductor (MOS) field-effect transistors (FETs) is approaching their fundamental physical limits. Carbon nanotubes (CNTs) are considered promising materials in the post silicon era due to their atomic thickness and unique electrical properties, with the potential to improve transistor performance while reducing power consumption. High purity aligned carbon nanotubes (A-CNT) are an ideal choice for driving advanced ICs due to their high current density. However, when the channel length (Lch) decreases below 30nm, the performance of single gate (SG) A-CNT FET significantly decreases, mainly manifested as deteriorating switching characteristics and increased leakage current. This article aims to reveal the mechanism of performance degradation in A-CNT FET through theoretical and experimental research, and propose solutions.