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The surface modification of silicon nitride powder is mainly achieved through physical and chemical methods to improve the physical and chemical properties of silicon nitride particles.
The surface modification of silicon nitride powder is mainly achieved through physical and chemical methods to improve the physical and chemical properties of silicon nitride particles.
Copper is different from metals such as aluminum and nickel in that it is difficult to form a dense and stable intrinsic passivation layer on its surface. Therefore, the exposed copper surface will be continuously oxidized and corroded by oxygen and water vapor in the air. The smaller the particle size and larger the specific surface area of copper powder, the easier it is to rapidly oxidize to produce products such as cuprous oxide (Cu2O) and copper oxide (CuO). This oxide insulation layer significantly reduces the conductivity of copper powder and hinders particle sintering connection, resulting in degradation of the performance of the conductive paste.
Copper nanoparticles have attracted a lot of interest in recent years due to their interesting properties, low-cost preparation, and many potential applications in catalysis, cooling fluids, or conductive inks. In this study, copper nanoparticles were synthesized by chemical reduction of copper sulfate CuSO4 and sodium borohydride NaBH ₄ in water without inert gas protection.
With the development of integrated circuit (IC) technology, the scaling of silicon-based metal oxide semiconductor (MOS) field-effect transistors (FETs) is approaching their fundamental physical limits. Carbon nanotubes (CNTs) are considered promising materials in the post silicon era due to their atomic thickness and unique electrical properties, with the potential to improve transistor performance while reducing power consumption. High purity aligned carbon nanotubes (A-CNT) are an ideal choice for driving advanced ICs due to their high current density. However, when the channel length (Lch) decreases below 30nm, the performance of single gate (SG) A-CNT FET significantly decreases, mainly manifested as deteriorating switching characteristics and increased leakage current. This article aims to reveal the mechanism of performance degradation in A-CNT FET through theoretical and experimental research, and propose solutions.
