China Spherical Hastelloy X alloy powder for 3D printing Manufacturers, Suppliers, Factory

On April 15th, the 135th Canton Fair, also known as the China Import and Export Fair, kicked off with the theme of “Promoting High-Quality Development and Building a High-Standard Open Platform”. This year's fair is held in three phases, with the last phase ending on May 5th. As one of the most significant international trade events globally, the Canton Fair attracts thousands of companies every year to showcase their latest products.

Copper is different from metals such as aluminum and nickel in that it is difficult to form a dense and stable intrinsic passivation layer on its surface. Therefore, the exposed copper surface will be continuously oxidized and corroded by oxygen and water vapor in the air. The smaller the particle size and larger the specific surface area of copper powder, the easier it is to rapidly oxidize to produce products such as cuprous oxide (Cu2O) and copper oxide (CuO). This oxide insulation layer significantly reduces the conductivity of copper powder and hinders particle sintering connection, resulting in degradation of the performance of the conductive paste.

Advanced ceramic materials, as an important component of new materials, are not only widely used in high-tech fields such as communication, electronics, aviation, aerospace, and military, but also have rapidly developed in the semiconductor and new energy industries in recent years, becoming the most promising application field for the next generation of advanced ceramic materials.

During the transportation process of powder, it is necessary to avoid stacking, as stacking can affect the fluidity of the powder. Stacking can be avoided by installing slopes, increasing transportation pipelines, and other methods.

With the development of integrated circuit (IC) technology, the scaling of silicon-based metal oxide semiconductor (MOS) field-effect transistors (FETs) is approaching their fundamental physical limits. Carbon nanotubes (CNTs) are considered promising materials in the post silicon era due to their atomic thickness and unique electrical properties, with the potential to improve transistor performance while reducing power consumption. High purity aligned carbon nanotubes (A-CNT) are an ideal choice for driving advanced ICs due to their high current density. However, when the channel length (Lch) decreases below 30nm, the performance of single gate (SG) A-CNT FET significantly decreases, mainly manifested as deteriorating switching characteristics and increased leakage current. This article aims to reveal the mechanism of performance degradation in A-CNT FET through theoretical and experimental research, and propose solutions.

​XRF, EDS, and ICP technologies are commonly used in material analysis, allowing businesses to study and identify different elements and materials. These technologies are integral to research, development, and the production of new products. In this blog post, we will discuss the benefits and applications of XRF, EDS, and ICP technology.