China BaTiO3 particle Manufacturers, Suppliers, Factory

In conclusion, ultrafine powders offer an array of benefits, but their processing can be challenging. Surface coating is an effective solution for enhancing the properties of these powders, improving their performance, and extending their applicable scope. The methods discussed in this blog post- PVD, CVD, sol-gel, and polymer coatings- are just a few examples of the many surface coating options that are available for ultrafine powders. Whether you are in the pharmaceuticals, cosmetic, or electronic industry, surface coating could make the difference in the success of your product.

Compared with traditional manufacturing materials, 3D printing powder has many advantages.

Aluminum nitride is a ceramic material with high melting point, hardness, and thermal conductivity, as well as good thermal stability and corrosion resistance. Its crystal structure is hexagonal, thus requiring high temperatures and pressures in the preparation process. Due to these excellent properties, aluminum nitride has been widely used in high-temperature electronic devices, thermal conductivity materials, and other fields.

​Dispersants or dispersing agents are substances that aid in the uniform distribution of particles or materials such as nanoparticles in a medium. Dispersing nanoparticles can be a challenging task due to their high surface area, tendency to agglomerate and their small size. In this article, we will discuss the basic principles of using dispersants in dispersing nanoparticles.

In recent years, the use of nanomaterials in the textile industry has greatly increased. The addition of nanomaterials to textiles can improve their functionality, durability, and overall quality. SAT NANO is a company that provides high-quality nanomaterials such as nanooxides and carbides for use in textiles. In this article, we will explore the different types of nanooxides and carbides that can be added to textiles.

With the development of integrated circuit (IC) technology, the scaling of silicon-based metal oxide semiconductor (MOS) field-effect transistors (FETs) is approaching their fundamental physical limits. Carbon nanotubes (CNTs) are considered promising materials in the post silicon era due to their atomic thickness and unique electrical properties, with the potential to improve transistor performance while reducing power consumption. High purity aligned carbon nanotubes (A-CNT) are an ideal choice for driving advanced ICs due to their high current density. However, when the channel length (Lch) decreases below 30nm, the performance of single gate (SG) A-CNT FET significantly decreases, mainly manifested as deteriorating switching characteristics and increased leakage current. This article aims to reveal the mechanism of performance degradation in A-CNT FET through theoretical and experimental research, and propose solutions.